General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
* High performance trench technology for ex.

* DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unles.

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced usi.

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